论文部分内容阅读
在电化学腐蚀硅微通道这一工艺过程中,温度是其中一个很重要的影响因素。通过研究温度对电化学腐蚀硅微通道过程中空穴输运的影响,加深对电化学腐蚀硅微通道这一过程的认识。利用电化学光照辅助阳极氧化法以n型(100)晶向单晶硅为研究对象,设计实验,得到硅微通道阵列在不同温度条件下的I-V特性扫描曲线、孔道的形貌以及孔道的深度;根据晶体中的散射机制的相关原理,研究了温度与载流子迁移率和扩散系数之间的关系;根据实验,得到了暗电流与温度的关系。最后通过对上述实验结果的分析,得出温度越低由空穴输运产生的空穴电流密度就越低,同时暗电流的值也越低,在较低温度下通过电化学腐蚀法制备的硅微通道结构形貌较好。
In the process of electrochemical etching of silicon microchannels, temperature is one of the most important factors. By studying the effect of temperature on the hole transport in electrochemical etching of silicon microchannels, we deepen our understanding of the process of electrochemical etching of silicon microchannels. Electrochemical light assisted anodization was used to investigate the characteristics of n-type (100) monocrystalline silicon. The experiment was designed to obtain the IV characteristics of the silicon microchannel array under different temperature conditions, the pore morphology and pore depth The relationship between temperature and carrier mobility and diffusion coefficient was studied based on the principle of scattering mechanism in crystal. According to the experiment, the relationship between dark current and temperature was obtained. Finally, through the analysis of the above experimental results, it is concluded that the lower the hole current density generated by hole transport is, the lower the dark current value is and the lower the current density is produced by electrochemical etching at a lower temperature Silicon microchannel structure morphology is better.