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利用蒙特卡罗分析法对GaAsflashADC的成品率及其关键参数的灵敏度进行了定性及定量的分析.当器件阈值电压的标准偏差增大时,flashADC的DNL,INL性能会以近似线性的关系降低且更高分辨率ADC线性性能的恶化速度更快;ADC的成品率离散达到一定程度后,以指数关系下降,且高分辨率ADC的丢码率会以更快的速度增长.分析结果表明,HBT以及带腐蚀自停止的HEMT技术是超高速高分辨率ADC的发展方向.
The yield of GaAsflashADC and the sensitivity of its key parameters were analyzed qualitatively and quantitatively by Monte Carlo method.When the standard deviation of the threshold voltage of the device increases, the DNL and INL performance of the flashADC decreases in an approximately linear relationship Higher resolution linearity degrades faster with ADC performance. Exponentially declining output yields of ADCs and loss rate of high resolution ADCs increase at a faster rate. The results show that HBT As well as HEMT technology with self-stop corrosion is the development direction of ultra-high speed and high resolution ADC.