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氮化硅具有耐腐蚀、耐高温、硬度高、磨擦系数小等特性,在工业应用中是一种优异的陶瓷材料,此外,由于氮化硅(Si_3N_4)有良好的绝缘性能,在大规模集成电路中用作掩膜或介质薄膜。近年来,采用电子束感生的化学气相沉积法(EBCVD),产生氮化硅薄膜沉积在SiO_2、多晶硅和单晶硅衬底上,这种方法要用NH_3、N_2和SiH_4作为反应气体,由于反应中含
Silicon nitride is corrosion-resistant, high temperature, high hardness, low coefficient of friction characteristics, is an excellent ceramic material in industrial applications, in addition, silicon nitride (Si_3N_4) has good insulation properties, large-scale integration Circuit used as a mask or dielectric film. In recent years, the use of electron beam induced chemical vapor deposition (EBCVD) to produce a thin film of silicon nitride deposited on the SiO 2, polycrystalline silicon and single crystal silicon substrate, this method to use NH 3, N 2 and SiH 4 as a reaction gas, due to Contained in the reaction