论文部分内容阅读
半导体材料硅中硼等痕量杂质含量在ppb级,一般的分析方法难以解决,中子活化也很少应用。中国科学院上海原子核所利用回旋加速器产生的氘子,同时测定了硅中痕量轻元素硼、碳、氮。对于含量为几十ppb的硼、碳、氮,其相对标准偏差B<±20％、C<±50％、N<±50％。方法简单、快速、且灵敏度高,是鉴定硅材料中轻杂质元素的一个好方法。此法也可用于其它超纯材料分析。
Semiconductor materials such as trace boron boron impurities trace levels in the ppb, the general analytical methods difficult to solve, neutron activation is also rarely used. The deuterium produced by the cyclotron in the Shanghai Atomic Nucleus of the Chinese Academy of Sciences was used to simultaneously determine the trace amounts of boron, carbon and nitrogen in silicon. For the boron, carbon, nitrogen content of dozens of ppb, the relative standard deviations B <± 20%, C <± 50%, N <± 50%. The method is simple, fast, and sensitive, and is a good way to identify light impurity elements in silicon materials. This method can also be used for other ultra-pure material analysis.