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介绍一种新型磁控溅射装置。它采用两块极性相对的环状磁铁的设计方法，通过扩大靶表面的等离子放电区域面积，使传统磁控溅射枪使用中经常受到的两个限制──溅射速率与靶的利用率得到了较大的改善。实验中铜靶在溅射功率密度为11W／cm~2时溅射速率约为800nm／min，如果继续提高功率则可获得更高的速率。而靶的利用率可达64％左右。另外，在认为出射粒子符合cos~nθ分布的前提下，发现当n＝3．3时，实验数据和理论数据符合得较好。
A new type of magnetron sputtering device is introduced. It uses two polar annular magnets designed to expand the area of the plasma discharge area of the target surface, so that the two limitations often encountered in the use of conventional magnetron sputtering guns - sputter rates and target utilization Has been greatly improved. In the experiment, the sputtering rate of copper target is about 800nm / min when the sputtering power density is 11W / cm ~ 2, and a higher rate can be obtained if the power is continuously increased. The target utilization rate of up to 64%. In addition, under the premise of the cos ~ nθ distribution of the exiting particles, it is found that the experimental data agree well with the theoretical data when n = 3.3.