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日本富士通研究所最近开发出了下一代高性能半导体——“单一电子元件”的生产工艺。这种新工艺是在半导体中形成微细的粒子,将电子一个个分别储存进去,并进行信号处理。这种半导体可以生产耗电量极小的大容量记忆用集成电路。 新工艺的主要方法是在砷化镓半导体中制作出直径为30纳诺(1纳诺为十亿分之一米)的网眼,填入微细砷粒子。在实用元件中,颗粒的直径必须控制在10纳诺米之内。
Japan's Fujitsu Institute recently developed the next generation of high-performance semiconductors - “a single electronic components,” the production process. This new process is the formation of fine particles in the semiconductor, the electronics were stored separately, and signal processing. This kind of semiconductor can produce the large capacity memory integrated circuit with very little electric consumption. The primary method of the new process is to make a mesh of 30 nanometers (1 nanometer to 1 billionths of a meter) in a gallium arsenide semiconductor, filled with fine arsenic particles. In practical components, the particle diameter must be controlled within 10 nanometers.