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通过工艺参数和电学参数,对不同电阻率和pn结面积的外延晶体管瞬时光电流进行估算。结果发现用一维数学模型引起较大误差,而用三维简化数学模型,估算结果与试验数据比较接近。
The instantaneous photocurrent of epitaxial transistors with different resistivity and pn junction area was estimated by process parameters and electrical parameters. The results show that using one-dimensional mathematical model causes large errors, but with the three-dimensional simplified mathematical model, the estimated results are close to the experimental data.