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利用真空蒸发镀膜技术研制出高灵敏度薄膜型ＩｎＳｂ霍尔器件．研究了影响ＩｎＳｂ薄膜电子迁移年的因素．俄歇电子能谱分析和扫描电镜形貌像表明，制各的ＩｎＳｂ薄膜化学元素配比与所用蒸发源材料相同，表面光滑，晶粒尺寸μｍ级。室温下测得ＩｎＳｂ薄膜的电子迁移率为４００００ｃｍ２／Ｖ·ｓ．ＩｎＳｂ薄膜霍尔器件输入输出电阻范围为２００～５００Ω，乘积灵敏度达到５０～１５０Ｖ／Ａ·Ｔ．
The use of vacuum evaporation coating technology developed high-sensitivity thin-film InSb Hall devices. The factors influencing the electron migration of InSb thin films were studied. Auger electron spectroscopy and scanning electron microscopy showed that the chemical composition of InSb thin films was the same as that of the evaporation source, with a smooth surface and a grain size of μm. The electron mobility of the InSb thin film measured at room temperature was 40000 cm2 / Vs. InSb film Hall device input and output resistance range of 200 ~ 500Ω, the product sensitivity of 50 ~ 150V / A · T.