气相刻蚀选择性制备单一导电属性单壁碳纳米管

• 作 者: 侯鹏翔 刘畅 成会明
• 机 构: 中国科学院金属研究所,沈阳材料科学国家(联合)实验室,
• 出 处: 科学通报
• 发表日期: 2014年33期
• 关键词: 刻蚀 碳纳米管 单壁碳纳米管 金属性 半导体性 气相刻蚀 气相 原位生长 选择性 属性

单一导电属性单壁碳纳米管的控制制备是目前碳纳米管研究领域的重点和难点,也是制约其在微纳电子器件中应用的瓶颈.近年来,研究者致力于发展获得单一导电属性单壁碳纳米管的方法,并取得了较大进展.其中,气相选择性刻蚀方法因具有工艺简单、效果显著、易规模化等特点而备受关注.本文简要介绍了气相选择性刻蚀方法制备单一导电属性碳纳米管的原理及特点,并综述近年来原位生长-刻蚀制备研究所取得的主要进展,最后展望其发展趋势.

Single-conductive properties of single-walled carbon nanotubes control Preparation of carbon nanotubes in the field of research is the focus and difficulty, but also restrict its application in micro-nano electronic devices bottleneck.In recent years, researchers committed to the development of a single conductive properties of single-walled Carbon nanotubes and made great progress, among which the gas selective etching method has drawn much attention because of its advantages of simple process, significant effect and easy scale-up.In this paper, the preparation of gas selective etching method The principle and characteristics of carbon nanotubes with single conductive properties are summarized. The main progress made in the in-situ growth-etching research in recent years is reviewed. Finally, the development trend is forecasted.