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ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl_2 and NH_3 on glass substrates and then were used as the active material in thin film transistors(TFTs).The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al_2O_3 as the gate insulator and Al as the source,drain and gate electrodes.The TFTs were annealed in air at 500 ℃ for 1 h.The TFTs with a50 μm channel length exhibited a high field-effect mobility of 0.45 cm~2/(V-s) and a low threshold voltage of 1.8 V.The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106,respectively.
ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl_2 and NH_3 on glass substrates and then used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al 2 O 3 as the gate insulator and Al as the source, drain and gate electrodes. TFTs were annealed in air at 500 ° C. for 1 h. TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm ~ 2 / (Vs) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to 0.6 V / dec and 106, respectively.