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本文针对ＧＴＯ吸收电路对快恢复二极管的要求，从快速整流二极管的理论出发，采用Ｎ型中照硅单晶材料，选择Ｐ￣＋ＩＮ￣＋型结构设计，用扩铂工艺控制少子寿命，通过多次的工艺改进和应用试验，重点探讨了二极管的正反向特性间的折衷关系，研制成功了１００Ａ／２５００Ｖ吸收二极管，该元件应用于ＧＴＯ交直交电力机车的研究，取得了满意的结果。
In this paper, the GTO absorption circuit for fast recovery diode requirements, starting from the fast rectifier diode theory, the use of N-type Chinese silicon as the single crystal material, select P ~ + IN ~ + type structure design, platinum expansion process to control the life of fewer children, Time process improvement and application test. The trade-off relationship between the forward and reverse characteristics of the diode was discussed. The 100A / 2500V absorption diode was successfully developed. The device has been used in the research of GTO AC-DC electric locomotive and has achieved satisfactory results.