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为了阐明杂质对半导体一系列物理性质影响的机构,必须研究杂质在半导体材料中的扩散过程。在本工作中进行了银对氧化亚铜电学性质影响的研究。银是在10~(-4)mmHg的真空中、600—1000℃温度范围内各不同温度下用扩散方法引入氧化亚铜中去的。我们测量了所有样品的电导温度由线(温度从20—-150℃)。结果表明:在600℃和800℃之下引入氧化亚铜中去的银引起新的局部能级,相应的激活能是0.45—0.48eV。对於在1000℃之下进行银扩散所得氧化亚铜样品却没有观察到新的能级,激活能仍是原来不含银的情况下的0.30eV。测量霍尔系数的结果表明,上述具有不同激活能的样品均为空穴型。上述实验结果可以解释为在600℃及800℃进入氧化亚铜的银转变成为AgO,在氧化亚铜内形成一受主杂质(AgO)~-(即产生0.45—0.48eV能级的杂质)。而在1000℃进入氧化亚铜样品的银将占据铜的空格点,即转变为Ag_2O;这对氧化亚铜的电学性质不会起什么影响,因此观察到的仍是原来氧的能级。
In order to clarify the impact of impurities on a series of physical properties of semiconductor bodies, we must study the impurities in the semiconductor material diffusion process. In this work, the influence of silver on the electrical properties of cuprous oxide has been studied. Silver is introduced into cuprous oxide by diffusion at different temperatures in the temperature range of 600-1000 ° C in a vacuum of 10-4 mmHg. We measured the conductance temperature of all samples by line (temperature from 20--150 ° C). The results show that silver introduced into cuprous oxide at 600 ° C and below 800 ° C causes a new localized level, corresponding to an activation energy of 0.45-0.48 eV. No new energy levels were observed for cuprous oxide samples silver diffused below 1000 ° C, and the activation energy was still 0.30 eV in the absence of silver. The results of measuring the Hall coefficient show that the samples with different activation energies are all of hole type. The above experimental results can be interpreted as the transition of silver into cuprous oxide at 600 ° C and 800 ° C into AgO, forming an acceptor impurity (AgO) ~ - (ie, producing an impurity of the order of 0.45-0.48 eV) within the cuprous oxide. The silver entering the cuprous oxide sample at 1000 ° C will occupy the vacancy point of the copper, ie, to Ag_2O; this will not affect the electrical properties of the cuprous oxide, so the original oxygen level is still observed.