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一、引言在微波场效应管不断向更高频率和大功率方向发展的情况下,无论是GaAs肖特基势垒场效直管或硅微波场效应管,均需要在极精细的图形上作好栅、源和漏的金属化。由于其图形十分精细,有的栅宽小于1微米,当然也有稍宽一些的,如2～4微米,但都是几百微米长,几百条并联的情况,所以用普通的光刻套刻方法来制备这样的金属条将是极为困难的。因而就必须寻找一种新方法,既能十分可靠的在这些小条上做出完整的金属化层,又不采用套刻的方法,而是用自对准来实现。目前在制作肖特基势垒场效应
I. INTRODUCTION In the situation that the microwave FET continues to develop towards higher frequency and higher power, both the GaAs Schottky barrier field effect transistor and the silicon microwave FET need to be fabricated on extremely fine patterns Good gate, source and drain metallization. Because of its very fine graphics, and some gate width of less than 1 micron, of course, a little wider, such as 2 to 4 microns, but are hundreds of microns long, hundreds of parallel cases, so use ordinary lithography engraving It would be extremely difficult to make such a metal strip by the method. Therefore, a new method must be found, which can not only make the complete metallization layer on these strips very reliable, but also do not adopt the method of enveloping, but realize it with self-alignment. Currently making Schottky barrier field effect