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砷化镓肖特基功率二极管已实用化。尽管砷化镓(GaAs)晶体有优良的物理特性,但以前却不能做成功率器件。主要原因是其晶体表面的电气不稳定性难以控制。以往,电源装置所用的整流器件,大多是快速硅二极管(FRD)或肖特基二极管(SBD)。日本Sanken公司开发的GSC系列砷化镓SBD不仅具有FED和硅SBD的特性,而且耐压高,有超高速特性。由于GaAs晶体的特点,GSC的反向恢复时间仅需几个ns,耐压为350V,采用了一种叫做RESP的结构,解决了GaAs晶体表面的不稳定问题。GSC系列为今后几MHz开关电源的设计提供了可能性。
GaAs Schottky power diodes have been put into practical use. Although gallium arsenide (GaAs) crystals have excellent physical properties, they have not been able to make power devices. The main reason is that the electrical instability of the crystal surface is difficult to control. In the past, most of the rectifying devices used in the power supply devices are fast silicon diodes (FRDs) or Schottky diodes (SBDs). The GSC series gallium arsenide SBD developed by Japan Sanken Company not only has the characteristics of FED and silicon SBD, but also has high pressure resistance and high speed characteristics. Due to the characteristics of GaAs crystals, GSC’s reverse recovery time is only a few ns and its withstand voltage is 350V. A structure called RESP is used to solve the problem of instability of GaAs crystal surface. The GSC Series offers the possibility of designing a few MHz switching power supplies in the future.