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为了获得高性能动态MOSRAM,有三种关键的器件工艺参数。高性能晶体管、低电阻互连线和较小的寄生电容可以实现高速度和低功耗工作。 我们推荐了一种可以满足以上要求的三次扩散MOS晶体管,成功地制作了一种新型的64K动态MOSRAM,它具有栅长为2.0微米的三次扩散MOS管结构。在功耗为150毫瓦时,发现这种RAM的典型存取时间为55毫微秒。 由于采用三次扩散MOS晶体管,减少了短沟道效应,降低了栅-漏/源的复盖电容和寄生电阻,使RAM有可能具有如此优异的电气性能。
In order to obtain high performance dynamic MOSRAM, there are three key device process parameters. High-performance transistors, low-resistance interconnects and small parasitic capacitances allow high-speed and low-power operation. We propose a third-order diffused MOS transistor that meets the above requirements and succeeded in creating a new 64K dynamic MOSRAM with a triple-diffused MOS structure with a gate length of 2.0 microns. At a power consumption of 150 milliwatts, this RAM was found to have a typical access time of 55 nanoseconds. Due to the triple-diffused MOS transistor, the short channel effect is reduced and the gate-drain / source cap capacitance and parasitic resistance are reduced, making RAM possible with such excellent electrical performance.