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本文创建了瞬时定态新方法。首次测出焊接熔池固-液界面前沿Si 溶质浓度分布呈指数形式衰减。展现出焊缝金属晶体萌生、长大不同时刻的凝固瞬时Si 溶质浓度分布。找到以固-液界面为界固相中Si 溶质堆积层厚度与液相中Si 溶质扩散层厚度之间的关系。提出界面组成过冷度是晶体变速生长的动力,表明在焊接过热条件下不存在均质形核假说。
This article created a new method of instantaneous stationary state. For the first time, the Si solute concentration distribution in the front of solid-liquid interface in weld pool decays exponentially. Show weld metal crystals initiation, growth at different times instantaneous solidification of Si solute concentration distribution. The relationship between the thickness of Si solute layer in the solid phase and the thickness of Si solute diffusion layer in the liquid phase is found at solid-liquid interface. It is proposed that the undercooling of the interface is the motive force for the crystal growth, indicating that there is no homogeneous nucleation hypothesis under the conditions of overheating.