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并五苯(Pentacene)具有优良的场效应晶体管特性及在可见光区的高吸收系数,被广泛应用于光敏(电)晶体管中.垂直晶体管的沟道长度可做到纳米量级,能有效提高器件的性能和工作频率,同时降低能耗.本文制备了一种基于垂直晶体管结构的低电压并五苯光电探测器ITO(S)/Pentacene/Al(G)/Pentacene/Au(D).实验发现,在工作电压低至-3 V时,并五苯光电探测器ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80nm)/Au的阈值电压为-0.9 V,“开/关”电流比为104,表现出了良好的P型晶体管特性以及低电压调控性能.在350—750 nm的不同波长单色光照射下,器件的“明/暗”电流比和响应度随入射波长而变化;在350nm单色光照射下,该光电探测器的“明/暗”电流比的最大值达到308,其对应的响应度为219 m A·W-1,大于标准硅基探测器在350 nm单色光照射下的探测率.这为制备低电压下工作的高灵敏度全有机光电探测器提供了一种可行的方法.
Pentacene is widely used in phototransistors because of its excellent field-effect transistor characteristics and high absorption coefficient in the visible region. The vertical length of the transistor can be on the order of nanometers, which can effectively improve the device Performance and operating frequency, and reduce the energy consumption at the same time.In this paper, we prepared a low voltage pentacene photodetector ITO / S / Pentacene / Au (D) based on a vertical transistor structure. , The threshold voltage of the pentacene photodetector ITO / Pentacene (80 nm) / Al (15 nm) / Pentacene (80 nm) / Au is -0.9 V at operating voltages as low as -3 V, “Current ratio of 104, showing a good P-type transistor characteristics and low voltage regulation performance of the different wavelengths in 350-750 nm monochromatic light irradiation, the device’s” light / dark “current ratio and responsivity With the incident wavelength changes; at 350nm monochromatic light irradiation, the photodetector ”light / dark " current ratio reaches a maximum of 308, the corresponding responsivity of 219 mA * W-1, greater than the standard The detection rate of the silicon-based detector at 350 nm monochromatic light provides the basis for the fabrication of high-sensitivity all-organic photodetectors operating at low voltages A viable approach.