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提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜.为在非晶硅表面获得均匀稳定的Ni源,在晶化前驱物表面浸沾Ni盐溶液之前,先旋涂一层表面亲合剂.通过控制Ni盐溶液的浓度,可以获得均匀性较好、晶粒尺寸分布在20—70μm的多晶硅薄膜.该方法的特点是改善了Ni盐溶液在表面的黏附状态,从而可在比常规Ni盐溶液浓度低1—2个数量级的情况下仍能获得大晶粒的多晶薄膜.
A surface-modified metal-induced crystallization method is proposed to stably obtain a polycrystalline silicon thin film with uniform grain size.In order to obtain a uniform and stable Ni source on the surface of the amorphous silicon, before the surface of the crystallized precursor is immersed in the Ni salt solution , Spin-coated with a layer of surface affinity agent by controlling the concentration of Ni salt solution can be obtained with good uniformity, the grain size distribution of polycrystalline silicon film 20-70μm The method is characterized by improved Ni salt solution on the surface Adhesion state so that large crystal polycrystalline thin films can still be obtained at 1-2 orders of magnitude lower concentration than conventional Ni salt solutions.