论文部分内容阅读
采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相-γL iA lO2层。研究了白宝石衬底表面形貌对-γL iA lO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响-γL iA lO2层质量的重要因素。要制备高质量的-γL iA lO2层,适度的表面粗糙度是恰当的。对白宝石衬底进行退火处理,-γL iA lO2层的择优取向变差。并对其中可能的机理进行了探讨。
A single -phase -γLiA lO2 layer was successfully prepared on the (0001) surface of white sapphire substrate by gas-phase transfer equilibrium (VTE) technique. The effect of the morphology of the surface of the white sapphire substrate on the quality of the γ-Al2O3 layer was investigated. It was found that the surface roughness of the white sapphire substrate and the annealing treatment are two important factors that affect the quality of the γ-Al2O3 layer. To prepare a high-quality layer of -γLiA lO2, moderate surface roughness is appropriate. Annealing the white sapphire substrate, the preferential orientation of the γLiAlO2 layer deteriorates. The possible mechanism is discussed.