论文部分内容阅读
据《Semiconductor FPD World》2004年第10期报道,日本丰田中央研究所成功开发了超高品质的SiC单晶。位错密度是1/100～1/1000。 SiC半导体具有优异的物理特性和电特性,期望应用于下一代大功率、超低损器件。然
According to “Semiconductor FPD World” 2004 No. 10 reported that Japan’s Toyota Central Research Institute has successfully developed ultra-high quality SiC single crystal. The dislocation density is 1/100 to 1/1000. SiC semiconductors have excellent physical and electrical properties and are expected to be used in the next generation of high-power, ultra-low-loss devices. Of course