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针对性能优越的同轴-环形硅通孔(Coaxial-Annular Through Silicon Via,CA-TSV)结构,提出了特征阻抗、功率、时间常数以及寄生参数的解析模型,研究了结构参数对其电学特性的影响,并通过HFSS软件对S21参数进行了验证,验证了结构参数对其电学特性的影响。结果表明,增加CA-TSV的内径或者减小其外径可以有效减小特征阻抗,而减小其内径或者增加其外径可以有效减小功率;增加CA-TSV的内径或者外径可以有效减小RC等效电路的时间常数,而增大其内径或者减小其外径可以有效减小RL等效电路的时间常数;增加CA-TSV的内径或者外径可以有效减小电阻并且可以使电容值显著提高。
Aiming at the structure of Coaxial-Annular Through Silicon Via (CA-TSV) with superior performance, the analytical models of characteristic impedance, power, time constant and parasitic parameters are proposed. The influence of structural parameters on the electrical characteristics The S21 parameters were verified by HFSS software, and the influence of structural parameters on the electrical characteristics was verified. The results showed that increasing the inner diameter of CA-TSV or decreasing its outer diameter can effectively reduce the characteristic impedance, while decreasing its inner diameter or increasing its outer diameter can effectively reduce the power; increasing the inner diameter or outer diameter of CA-TSV can effectively reduce Small RC equivalent circuit time constant, and increase its diameter or reduce its outer diameter can effectively reduce the RL equivalent circuit time constant; increase CA-TSV diameter or outer diameter can effectively reduce the resistance and can make the capacitance The value is significantly higher.