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本文详细研究了非晶硅锗／非晶硅（ａ－ＳｉＧｅｘ：Ｈ／ａ－Ｓｉ：Ｈ）超晶格材料作为电荷产生层和非晶硅氮（ａ－ＳｉＮｘ：Ｈ）作为电荷输运层的近红外敏化的新型感光体。光电测量、光衰减特性测量（ＰＩＤ）和渡越时间法测量（ＴＯＦ）等结果表明：电荷产生层和电荷输运层之间的异质界面性质严重影响感光体的性能，具有良好异质界面的感光体有优异的光衰减特性；感光体的表面荷电能力大于２５Ｖ／μｍ，半暗衰减时间大于１０秒，半光衰时间小于０１秒，残余电位约等于零；感光体对近红外光（７５０ｎｍ～８００ｎｍ）的光敏性（Ｅ１／２）优于普通非晶硅感光体的光敏性。因而，这种新型感光体可望用于激光打印机中。
In this paper, the a-SiGex: H / a-Si: H superlattice materials have been studied in detail as the charge generation layer and the amorphous silicon nitride (a-SiNx: H) Near-infrared sensitization of the new photoreceptor. The results of photoelectric measurement, optical attenuation characteristic measurement (TOF) and so on show that the heterogeneous interface between the charge generation layer and the charge transport layer seriously affects the performance of the photoreceptor, and has a good heterogeneous interface Of the photoreceptor has excellent light attenuation characteristics; photoreceptor surface charge capacity greater than 25V / μm, half-dark decay time greater than 10 seconds, the half-decay time of less than 0.1 seconds, the residual potential is equal to about zero; photoreceptor near-infrared Photosensitivity (E1 / 2) of light (750 nm to 800 nm) is superior to that of ordinary amorphous silicon photoconductors. Therefore, this new type of photoconductor is expected to be used in laser printers.