Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer

• 作 者: 邓小川 张波 张有润 王易 李肇基
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
• 出 处: Chinese Physics B
• 发表日期: 2011年01期
• 关键词: saturation drain parasitic analysed breakdown oscillation have posed behaviour d

An improved 4H-SiC metal-semiconductor field-effect transistors (MESFETs) with step p-buffer layer is proposed,and the static and dynamic electrical performances are analysed in this paper.A step p-buffer layer has been applied not only to increase the channel current,but also to improve the transconductance.This is due to the fact that the variation in p-buffer layer depth leads to the decrease in parasitic series resistance resulting from the change in the active channel thickness and modulation in the electric field distribution inside the channel.Detailed numerical simulations demonstrate that the saturation drain current and the maximum theoretical output power density of the proposed structure are about 30% and 37% larger than those of the conventional structure.The cut-off frequency and the maximum oscillation frequency of the proposed MESFETs are 14.5 and 62 GHz,respectively,which are higher than that of the conventional structure.Therefore,the 4H-SiC MESFETs with step p-buffer layer have superior direct-current and radio-frequency performances compared to the similar devices based on the conventional structure.

An improved 4H-SiC metal-semiconductor field-effect transistors (MESFETs) with step p-buffer layer is proposed, and the static and dynamic electrical performances are analyzed in this paper. A step p-buffer layer has been applied not only to increase the channel current, but also to improve the transconductance.This is due to the fact that the variation in p-buffer layer depth leads to the decrease in parasitic series resistance resulting from the change in the active channel thickness and modulation in the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum theoretical output power density of the proposed structure are about 30% and 37% larger than those of the conventional structure. The cut-off frequency and the maximum oscillation frequency of the proposed MESFETs are 14.5 and 62 GHz, respectively, which are higher than that of the conventional structure. Herefore, the 4H-SiC MESFETs with step p-buffer layer have superior direct-current and radio-frequency performances compared to the similar devices based on the conventional structure.