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由于GaAs材料有较高的电子迁移率和宽的禁带,因此用它制成霍尔器件有非常好的温度特性,如霍尔电压温度系数小和使用温度范围宽(-273-280℃)等.我们用改进后的工艺,生长出LEP-GaAs材料,并已制成性能良好的霍尔器件,该器件已用在数字高斯计上.
As GaAs materials have high electron mobility and a wide band gap, Hall devices made of it have very good temperature characteristics, such as small Hall voltage temperature coefficient and wide operating temperature range (-273-280 ℃) Etc. We use the improved process to grow LEP-GaAs material, and has made a well-functioning Hall device, the device has been used in digital gaussmeter.