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运用蒙特卡罗方法，模拟了不同条件下的物理气相淀积薄膜生长过程。在40×40个原子的简单立方单晶（100）面上，模拟计算了不同条件下所成简单立方单晶薄膜的生长情况，得出了覆盖率、成膜速率、稳定性与基体温度、蒸气压强的关系。模拟计算结果与理论和实验一致。
Monte Carlo method was used to simulate the physical vapor deposition film growth under different conditions. The growth of simple cubic single crystal thin films grown under different conditions was simulated on 40 × 40 atoms of simple cubic single crystal (100) surface. The effects of coverage, deposition rate, stability and substrate temperature, Vapor pressure relationship. The simulation results are consistent with the theory and experiment.