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本文提出了一种Ｂｉ－ＭＯＳ混合模式晶体管──ＢＭＨＭＴ，其本质上为表面ＭＯＳ与ＬＢＪＴ共同工作的四端ＭＯＳＦＥＴ，工艺上与ＭＯＳＦＥＴ全兼容。ＢＭＨＭＴ具有比单一ＭＯＳ、单一ＬＢＪＴ及他们的简单叠加更高的电流驱动能力，ＢＭＨＭＴ作为一种发射结具有赝异质结特性的器件，在输出电流为每单位宽度０．５ｍＡ时电流放大倍数可高达２５００（Ｖ＿（ＢＳ）＝０．６２Ｖ），在小的基区电流下，ＢＭＨＭＴ的短沟效应明显小于ＭＯＳＦＥＴ。ＰＩＳＣＥＳ模拟结果与实验结果成功地证明了ＢＭＨＭＴ的以上特点。
This paper presents a Bi-MOS hybrid mode transistor ─ ─ BMHMT, which is essentially a four-terminal MOSFET with surface MOS and LBJT work together, fully compatible with the MOSFET process. BMHMT has a higher current drive capability than a single MOS, a single LBJT and their simple superposition. BMHMT, a device with a pseudomorphic junction characteristic for the emitter junction, provides current magnification at 0.5mA per unit width As high as 2500 (V_ (BS) = 0.62V), the short-channel effect of BMHMT is significantly smaller than that of MOSFET with small base current. PISCES simulation results and experimental results have successfully proved the above characteristics of BMHMT.