The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of

• 作 者: 李炳生 肖芝燕 马剑刚 刘益春
• 机 构: Department of physics, School of Sciences, Harbin Institute of Technology,Key Laboratory of UV Light
• 出 处: Chinese Physics B
• 发表日期: 2017年11期
• 关键词: doping annealing ultraviolet realization outlook exciton substitution oxidizing

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronics devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.