,Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Sur

• 作 者: 刘杰 沈波 王茂俊 周玉刚 郑泽伟 张荣 施毅 郑有炓 T.Someya Y.Arakawa
• 机 构: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Na
• 出 处: 中国物理快报（英文版）
• 发表日期: 2002年12期

Pt/Au Schottky contacts were fabricated on modulation-doped Alo.22GaNo. 7s/GaN heterostructures. Some dif-ferent pre-deposition surface treatments were used to prevent the formation of the native oxide layer on the Alo.22GaNo.78 surface. X-ray photoelectron spectroscopy measurements indicate that the pre-deposition surface treatment with boiling (NH4)2S solution can remove the native oxide layer on the Alo.22Gao.7sN surface effec-tively. The highest Schottky barrier height of 1.13eV was obtained on the (NH4)2S-treated Al0.22GaNo. 78/GaN heterostructure.