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The impact of various thicknesses of Al_2O_3 metal-insulator-metal(MIM) capacitors on direct current and radio frequency(RF) characteristics is investigated.For 20 nm Al_2O_3,the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm~2 and acceptable voltage coefficients of capacitance of 681 ppm/V~2 at 1 MHz.An outstanding VCC-α of 74 ppm/V~2 at 1 MHz,resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al_2O_3 MIM capacitors.High-performance MIM capacitors using GaAs process and atomic layer deposition Al_2O_3 could be very promising candidates for GaAs RFIC applications.
The impact of various thicknesses of Al 2 O 3 metal-insulator-metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al 2 O 3, the fabricated capacitor exhibits a high capacitance density of 3850 pF / mm ~ 2 and The acceptable voltage coefficients of capacitance are 681 ppm / V ~ 2 at 1 MHz. An outstanding VCC-α of 74 ppm / V ~ 2 at 1 MHz, the resonance frequency of 8.2 GHz and the Q factor of 41 at 2 GHz are obtained by 100 nm Al_2O_3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al_2O_3 could be very promising candidates for GaAs RFIC applications.