New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

• 作 者: 周静 万里兮 李君 王惠娟 戴风伟 Daniel Guidotti 曹立强 于大全
• 机 构: Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chi
• 出 处: Journal of Semiconductors
• 发表日期: 2013年04期
• 关键词: embedding extracting innovative Spice dealing microwave insertion handle labeled

Two innovative de-embedding methods are proposed for extracting an electrical model for a throughsilicon -via(TSV) pair consisting of a ground-signal(GS) structure.In addition,based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding.A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method,a typical “π” type model of the TSV pair is developed,which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model.This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs.The feasibility of a second de-embedding method is also investigated.

Two innovative de-embedding methods are proposed for extracting an electrical model for a through silicon-vias (TSV) pair consisting of a ground-signal (GS) structure. Addition, based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding. A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method, a typical “π ” type model of the TSV pair is developed, which shows the need to allow for frequency dependence in the equivalent TSV pair Spice model. This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs. The feasibility of a second de- embedding method is also investigated