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采用等离子体增强化学气相沉积高低频交替生长法生长了SiO_2/Si_3N_4透明介质分布式:Bragg反射镜(DDBR),提出了对DDBR采用干、湿法并用的腐蚀方法.采用传输矩阵法理论分析了DDBR,得出了为满足出光增益要求的反射率和DDBR结构.使用光致发光(PL)谱仪测量分析了DDBR反射谱和光致发光谱,获得了使光致发光谱辐射增强的DDBR结构,在整个光致发光谱380-780 nm波段,整体辐射增强1.058倍,在谐振波长处辐射增强1.5倍,半峰全宽值由23 nm变窄为10.5nm,获得了很好的光谱纯度.利用最优DDBR结构制成了高性能共振腔发光二极管器件,与普通结构相比,实现了低开启电压1.78 V;在20 mA注入电流下,轴向光强提高了20%,光功率和光效分别提高了27.7%和26.8%,光功率衰减缓慢;在O-100 mA注入电流下,没有明显的下降趋势,表现出了良好的温度稳定性.
The distribution of transparent medium of SiO_2 / Si_3N_4: Bragg reflector (DDBR) was grown by plasma-enhanced chemical vapor deposition at high frequency and low frequency, and the corrosion method of DDBR using dry and wet methods was proposed.The transmission matrix method was used to analyze DDBR was used to obtain the reflectance and DDBR structure required by the light gain.The DDBR spectra and photoluminescence spectra of DDBR were measured and measured by using a photoluminescence (PL) spectrometer, and the DDBR structure with enhanced photoluminescence spectra was obtained. In the whole photoluminescence spectrum of 380-780 nm, the overall radiation enhancement is 1.058 times, the radiation enhancement at the resonance wavelength is 1.5 times and the full width at half maximum (FWHM) is narrowed from 23 nm to 10.5 nm, and good spectral purity is obtained. The optimal DDBR structure is a high-performance resonant cavity LED device. Compared with the conventional structure, a low turn-on voltage of 1.78 V is achieved. Under the injection current of 20 mA, the axial light intensity is increased by 20% and the optical power and luminous efficiency are respectively Increased by 27.7% and 26.8%, respectively. The optical power attenuated slowly. There was no obvious downward trend at the injection current of 0-100 mA, which showed good temperature stability.