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本文阐述X射线能谱测量用的半导体探测器,对硅与锗X射线探测器进行了比较。扼要介绍了X荧光分析用的探测器的制备方法和性能,分析了影响探测器效率的因素。实际量测了1.5-60keV的X和低能γ射线。对于能量>5keV的X射线,探测效率用~(241)Am源刻度,<5keV时,用玻璃荧光源测量窗吸收及其他效率损失的标准技术。测量结果与文献发表过的数据进行了比较。
This article describes the use of semiconductor detectors for X-ray energy spectrum measurements, comparing silicon with germanium X-ray detectors. The preparation method and performance of X-ray fluorescence detector are briefly introduced. The factors affecting the detector efficiency are analyzed. The actual measurement of 1.5-60keV X and low-energy gamma rays. Standard techniques for measuring window absorbance and other efficiency losses with glass-based fluorescent sources for x-ray detection at energies> 5 keV with ~ (241) Am source calibration. The results of the measurements were compared with those published in the literature.