【摘 要】
：
We report the design,synthesis,structure,and properties of two complex layered phosphide nitrides,AkTh2Mn4P4N2 (Ak =Rb,Cs),which contain anti-fluorite-type[Mn2P2]bilayers separated by fluorite-type[Th2N2]layers as a result of the intergrowth between AkMn2
【机 构】
：
Department of Physics,Zhejiang Province Key Laboratory of Quantum Technology and Devices,Interdiscip
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We report the design,synthesis,structure,and properties of two complex layered phosphide nitrides,AkTh2Mn4P4N2 (Ak =Rb,Cs),which contain anti-fluorite-type[Mn2P2]bilayers separated by fluorite-type[Th2N2]layers as a result of the intergrowth between AkMn2P2 and ThMnPN.The new compounds are featured with an intrinsic hole doping associated with the interlayer charge transfer and a built-in chemical pressure from the[Th2N2]layers,both of which are reflected by the changes in the lattice and the atomic posi-tion of phosphorus.The measurements of magnetic susceptibility,electrical resistivity,and specific heat indicate existence of local moments as well as itinerant electrons in relation with d-p hybridizations.The expected dominant antiferromagnetic interactions with enhanced d-p hybridizations were demonstrated by the first-principles calculations only when additional Coulomb repulsions are included.The density of states at the Fermi level derived from the specific-heat analysis are 3.5 and 7.5 times of the calculated ones forAk =Rb and Cs,respectively,suggesting strong electron correlations in the title compounds.
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