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用TEA CO_2激光诱导四甲基硅烷(TMS)的气相反应,生成了纯而均匀的SiC超细粉末,粒径小于0.2μm。把反应物置于均匀外电场中,可以使引发化学反应时所需的激光功率密度阀值降低一倍。TMS气压可达到40kPa。讨论了气体分压比对反应速度、产率与产物成分的影响。
The gas phase reaction of tetramethylsilane (TMS) was induced by TEA CO_2 laser to form a pure and uniform SiC ultrafine powder with particle size less than 0.2 μm. Placing the reactants in a uniform external electric field can double the required laser power density threshold to initiate the chemical reaction. TMS pressure up to 40kPa. The effects of gas partial pressure ratio on the reaction rate, yield and product composition were discussed.