【摘 要】
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Based on a two-energy-level system, we analyse the changing ground eigenenergies of symmetric GaAs/Alx Ga1-x As coupled quantum wells in the presence of an appl
【机 构】
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Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027“,
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Based on a two-energy-level system, we analyse the changing ground eigenenergies of symmetric GaAs/Alx Ga1-x As coupled quantum wells in the presence of an applied electric field.From the theoretical analysis for symmetric coupled quantum well, we find the advantages and disadvantages when it is applied to tvavelling wave modulator.Hence the conception of quasi-symmetric coupled quantum wells is put forward.Based on the demands of travelling wave modulator for quantum well materials, the configuration of quasi-symmetric coupled quantum well is further optimized.Consequently, in the case of low applied electric field (F = 20 kV/cm) and low absorption loss (α≤ 100 cm-1), a large field-induced refractive change △n (for TE mode, △n = 0.021; for TM mode, △n = 0.0121) is attained in the optimized coupled quantum well.
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