论文部分内容阅读
研究非晶ＳｉＯ２缺陷能级上电子的隧道效应，移植实验的ＸＰＳ芯能级谱技术，用ＤＶ－Ｘα计算界面ＳｉＯ２／ＺｎＳ的能带断错，认为该界面处的能带断错是电子加速的主要机制．
The electron tunneling effect of amorphous SiO2 defects was studied. The XPS core energy spectrum of the transplanted experiment was used to calculate the energy band offset of SiO2 / ZnS in the interface with DV-Xα. The energy band fault at the interface was electron acceleration The main mechanism.