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提出了一种用于研究纳米尺寸MOSFETs亚阈值特性的新方法——摄动法.使用摄动法来求解泊松方程,使得在纳米尺寸MOSFETs工作中不再起作用的耗尽层近似和页面电荷模型在求解过程中被避免,由此可以解得一个指数形式的亚阈值电流的表达式,从而得到关于亚阈值摆幅变化的解析表达式.通过把所建立的解析模型的计算结果和Medici仿真软件的模拟结果进行比较,可以证明该适用于分析亚阈值区工作特性的模型具有相当的准确性和可用性.
A new method for studying the subthreshold characteristics of nanosized MOSFETs, the Perturbation Method, is proposed, which uses the perturbation method to solve Poisson’s equations so that the depletion layer approximation and page charge that no longer work in the operation of nanoscale MOSFETs The model is avoided in the process of solving, so an exponential form of expression of sub-threshold current can be obtained to get the analytical expressions about the subthreshold swing. By comparing the calculated results of the analytical model with the Medici simulation Software simulation results to compare, you can prove that the model for the analysis of sub-threshold zone operating characteristics with considerable accuracy and availability.