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一、引言氮化硅薄膜具有高的电阻率、击穿强度、化学惰性等优良性能,这些性能应用在半导体器件中是很有利的。在前一阶段我们已报导了SiH_4—NH_3—H_2体系热解淀积氮化硅薄膜的制备、性质和应用[1]。曾试用在4S11等大功率硅台面管上,作为P—N结钝化层,提高了管子的BV_(CEO)和I_(DO),并提高了器件的可靠性和成品率。用氨气所制得的氮化硅薄膜,要以二氧化硅作掩膜,先刻氧化硅,后用磷酸腐蚀氮化硅,比较麻烦,没有特殊要求一般不愿意采用。为了推广氮化硅的应用,必须简化光刻工艺,制取可以用
I. INTRODUCTION Silicon nitride films have excellent properties such as high resistivity, breakdown strength and chemical inertness. These properties are very useful in semiconductor devices. In the previous stage, we have reported the preparation, properties and applications of SiH 4 -HN 3 -H 2 pyrolytic deposition of silicon nitride films [1]. Have tried on the 4S11 and other high-power silicon mesa tube, as the P-N junction passivation layer to improve the BV_ (CEO) and I_ (DO) of the tube, and improve device reliability and yield. With ammonia gas obtained by the silicon nitride film to silicon dioxide as a mask, first silicon oxide, silicon nitride etching with phosphoric acid, more trouble, no special requirements are generally not willing to use. In order to promote the application of silicon nitride, we must simplify the lithography process, the system can be used