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The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO2/4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (～4×1010 cm?2·eV?1@Ec?0.2 eV) is demonstrated on SiO2/SiC stack formed by microwave plasma oxi-dation. And high quality SiO2 with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm?2·eV?1 is re-alized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.