,Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation i

• 作 者: You-Peng Xiao Xiu-Qin Wei Lang Zhou
• 机 构: Institute of Photovoltaic/School of Materials Science and Engineering, Nanchang University, Nanchang
• 出 处: 中国物理B（英文版）
• 发表日期: 2017年4期
• 关键词: amorphous silicon microstructure hydrogen bonding configurations interface state

Intrinsic hydrogenated amorphous silicon (a-Si∶H) film is deposited on n-type crystalline silicon (c-Si) wafer by hotwire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density (Dit) from lifetime measurement is proposed.The interface state density (Dit) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si∶H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively.Lower values of interface state density (Dit) are obtained by using a-Si∶H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.