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碳化硅在场致发射 (FEE)应用中除了具有金刚石的一般优点之外 ,还具有易于n型或者p型掺杂的特性。本文用APCVD方法研制了一种SiC薄膜。在FEE测试中发现 ,其开启场强低达 0 .3MV/m。根据电子发射过程的理论分析 ,得到一种电流随电压指数增加的模式可用于理解场致发射的测试结果。根据这个模型 ,电子从衬底向薄膜的注入和电子在薄膜中的输运是限制发射的主要因素。由此还可以推测 ,薄膜中相邻的电子传递中心之间的距离约为 0 .6nm。
In addition to the general advantages of diamond in field emission (FEE) applications, silicon carbide has the potential to be easily n-type or p-type doped. In this paper, a SiC film was developed by APCVD method. Found in the FEE test, its opening field strength as low as 0.3 MV / m. According to the theoretical analysis of the electron emission process, a mode that the current increases with voltage exponential can be used to understand the field emission test results. According to this model, the injection of electrons from the substrate to the thin film and the transport of electrons in the thin film are the main factors that limit the emission. It can also be speculated that the distance between adjacent electron transport centers in the film is about 0.6 nm.