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基于标准工艺自主研制了L波段0.5μm栅长的GaN HEMT器件。该器件采用了利用MOCVD技术在3英寸(1英寸=2.54 cm)SiC衬底上生长的AlGaN/GaN异质结外延材料,通过欧姆接触工艺的改进将欧姆接触电阻值控制在了0.4Ω·mm以内,采用场板技术提高了器件击穿电压,采用高选择比的刻蚀工艺得到了一定倾角的通孔,提高了器件的散热能力及增益。结果表明,采用该技术研制的两胞内匹配GaN HEMT器件在工作频率1.5~1.6 GHz下,实现了输出功率大于66 W、功率增益大于15.2 dB、功率附加效率大于62.2%。
A GaN HEMT device with L-band 0.5μm gate length was independently developed based on standard process. The device uses an AlGaN / GaN heterostructure epitaxial material grown on a 3-inch (1 inch = 2.54 cm) SiC substrate using MOCVD technology and has improved the ohmic contact resistance to 0.4 Ω · mm , The use of field-plate technology to improve the device breakdown voltage, the use of high selectivity than the etching process has been a certain angle of the through-hole, improve the cooling capability and gain of the device. The results show that the dual intracavity matched GaN HEMT device achieves output power greater than 66 W, power gain greater than 15.2 dB and power added efficiency greater than 62.2% at 1.5 ~ 1.6 GHz operating frequency.