Electric dipole formation at high-k dielectric/SiO_2 interface

• 作 者: 韩锴 王晓磊 杨红 王文武
• 机 构: Department of Physics and Electronic Science, Weifang University,Key Laboratory of Microelectronics
• 出 处: Journal of Semiconductors
• 发表日期: 2015年03期
• 关键词: dipole dielectric utilized quantitatively explained initially conduction semicon

The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states(DCIGS). The charge neutrality level(CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k/SiO2 systems based on this model are in good agreement with the experimental data.

The formation of an electric dipole at the high-k / SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k / SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge The neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k / SiO2 systems based on this model are in good agreement with the experimental data.