Investigation of the lateral spread of erbium ions implanted in silicon crystal

• 作 者: 秦希峰 陈明 王雪林 梁毅 张少梅
• 机 构: School of Physics,Shandong University,College of Science,Shandong Jian Zhu University,State Key Labo
• 出 处: Chinese Physics B
• 发表日期: 2010年11期
• 关键词: implanted Rutherford spread codes implantation incident resistivity FWHM vertica

The erbium ions at energy of 400 keV and dose of 5×10 15 ions/cm 2 were implanted into silicon single crystals at room temperature at the angles of 0,45 and 60.The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique.The results show that the measured values were in good agreement with those obtained from the prediction of TRIM’98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.

The erbium ions at energy of 400 keV and dose of 5 × 10 15 ions / cm 2 were implanted into silicon single crystals at room temperature at the angles of 0, 45 and 60. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values ​​were in good agreement with those obtained from the prediction of TRIM’98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.