氢化非晶硅结晶膜的微结构研究

• 作 者: 黄信凡 华雪梅 朱伟英 郑虹 陈坤基
• 机 构: 南京大学物理系,南京大学物理系,南京大学物理系,南京大学物理系,南京大学物理系
• 出 处: 化学物理学报
• 发表日期: 2004年期
• 关键词: 择优取向 平均晶粒尺寸 激光辐照 等离子体增强 化学汽相淀积 微米量级 氢化非晶硅 卤钨灯 结晶 射线衍射分析

本文利用连续波Ar~+激光和卤钨灯光对等离子体增强化学汽相淀积法(PECVD)淀积的未掺杂和掺磷的α-Si:H膜进行结晶。对于Ar~+激光辐照结晶情况由转靶X射线衍射分析和透射电子显微镜(TEM)分析表明,上述两种薄膜无明显差异,均呈现<111>择优取向,平均晶粒尺寸约数十微米。对于灯光结晶情况,在700℃/4min条件下,也均呈现<111>择优取向,但掺磷样品的结晶程度更强一些,X射线衍射峰更尖锐,相应的平均晶粒尺寸较大,达亚微米量级。

In this paper, un-doped and phosphorus-doped α-Si: H films deposited by plasma enhanced chemical vapor deposition (PECVD) were deposited by continuous wave Ar ~ + laser and tungsten halogen lamp. For Ar ~ + laser irradiation, X-ray diffraction analysis and transmission electron microscopy (TEM) analysis showed that there was no significant difference between the above two films, both of which exhibited <111> preferred orientation with average grain size of about tens of micrometers . For the light crystallization, <111> preferred orientation was also observed at 700 ° C for 4 min, but the crystallinity of the phosphorus-doped sample was stronger, the X-ray diffraction peak was sharper, and the corresponding average grain size was larger Submicron orders of magnitude.