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本文在国内首次报道了利用ＩｎＡｓ外延薄膜制作霍尔器件，通过分子束外延技术在ＧａＡｓ衬底上生长的ＩｎＡｓ薄膜具有较高的迁移率和较好的温度特性．用这种材料制作的霍尔器件在每千欧姆内阻条件下灵敏度与ＧａＡｓ平面Ｈａｌ器件相比提高了５０％．
This paper reports for the first time in China the fabrication of Hall devices using InAs epitaxial films. InAs films grown on GaAs substrates by molecular beam epitaxy have higher mobility and better temperature characteristics. Hall devices made from this material have a 50% improvement in sensitivity per kilohm of internal resistance compared to GaAs planar Hal devices.