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介绍了基于共振隧穿二极管的隧穿静态随机存储器的单元结构和原理 .讨论了 n MOS,p MOS和 CMOS作为单元里的选中管的特点 ,综合考虑面积和功耗后 ,发现 n MOS是选中管的最佳选择 .设计了基于 RTD的 TSRAM系统结构 .模拟显示了这种新型存储器具有高集成度、高速和低功耗的优势 .
The structure and principle of the tunneling static random access memory based on resonant tunneling diode are introduced. The characteristics of n MOS, p MOS and CMOS as the selected tubes in the cell are discussed. After considering the area and the power consumption, n MOS is selected The best choice for the pipe.The structure of TSRAM system based on RTD has been designed and simulation shows that the new memory has the advantages of high integration, high speed and low power consumption.