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利用水热法,在没有表面活性剂和有机溶剂的情况下,在一定pH值下合成In(OH)3微米立方。通过在400℃煅烧In(OH)3前驱体,制备In2O3微米立方。所制备的In2O3保持In(OH)3微米立方的结构和形貌,但在煅烧中,由于脱水,In2O3微米立方有轻微的变形。采用X射线衍射仪、扫描电镜和热重分析对所制备样品的相成分、形貌和热性能进行表征。在最佳工作温度275℃下,评估In2O3微米立方对H2、CO、CH4、C2H5OH和CO2的气敏性能。测试结果表明,In2O3微米立方对C2H5OH有良好的气敏性能。最后,对In2O3微米立方的敏感机理进行讨论,可知In2O3微米立方除了作为气敏材料,也可用于微电子和光电子器件材料。
Hydrothermal synthesis of In (OH) 3 micrometer cubic at a certain pH was performed in the absence of surfactant and organic solvent. In2O3 micron cubic was prepared by calcining the In (OH) 3 precursor at 400 ° C. The prepared In2O3 maintains the structure and morphology of In (OH) 3 micrometer cubic, but in the calcination, there is a slight deformation of In2O3 micrometer cubic due to dehydration. The phase composition, morphology and thermal properties of the prepared samples were characterized by X-ray diffraction, scanning electron microscopy and thermogravimetric analysis. The gas sensitivities of In2O3 micro cube to H2, CO, CH4, C2H5OH and CO2 were evaluated at the optimum working temperature of 275 ℃. The test results show that In2O3 micron cubic C2H5OH have good gas sensitivity. Finally, the sensitive mechanism of In2O3 micron cube is discussed, it can be seen that In2O3 micron cubic addition as a gas-sensitive material can also be used for microelectronics and optoelectronic devices.