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n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n-In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkablyincreased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12hirradiation at 100 mW/cm~2 at an applied potential of+1.2V.XPS and Auger analysis were carriedout for examining surface and bulk concentration.The photoetching effect could be satisfactorilyexplained.