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本文主要对GaAs光导开关触发下ZnO产生电脉冲物理过程作了简要分析,并把它分为三个阶段。在第一阶段提出ZnO在电脉冲的作用下会产生位移电流,第二阶段估计出ZnO从容性阶段过渡到阻性阶段的大致时间,且发现半导体开关也可使ZnO产生残压过冲,指出ZnO的残压过冲可能是位移电流和其从容性过渡到阻性阶段的时间差共同作用所致。第三阶段得出ZnO在非线性阶段有快速稳定产生载流子的机制。
In this paper, the physical process of ZnO pulse generation triggered by GaAs photoconductive switch is briefly analyzed and divided into three stages. In the first stage, it is proposed that ZnO will generate displacement current under the effect of electric pulse. In the second stage, the approximate transition time of ZnO from capacitive phase to resistive phase is estimated, and it is found that the semiconductor switch can also make residual voltage overshoot of ZnO. The residual voltage overshoot of ZnO may be due to the combination of the displacement current and the time difference from capacitive to resistive. The third stage shows that ZnO has a mechanism of fast and stable carrier generation in the nonlinear phase.